Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-12-20
著者
-
Itoh Hisayoshi
Institute Of Materials Science University Of Tsukuba
-
Kudo Hiroshi
Institute Of Applied Physics University Of Tsukuba
-
Masuda K
Univ. Tsukuba Ibaraki
-
Masuda Kohzoh
Institute Of Materials Science University Of Tsukuba Tsukuba Academic City
-
Masuda Kohzoh
Institute Of Materials Science University Of Tsukuba
-
TAKITA Koki
Institute of Materials Science, University of Tsukuba
-
Masuda K
Department Of Physics Faculty Of Science Yamagata University
-
Shima K
New Technology Research Laboratory Central Research Laboratories Sumitomo Osaka Cement Co. Ltd.
-
MURAKAMI Kouichi
Institute of Materials Science, University of Tsukuba, Tsukuba Academic City
-
SHIMA Kunihiro
Institute of Applied Physics, University of Tsukuba
-
IPPOSHI Takashi
Institute of Materials Science, University of Tsukuba
-
SEKI Seiji
Tandem Accelerator Center, University of Tsukuba
-
Ipposhi Takashi
Institute Of Materials Science University Of Tsukuba
-
Murakami Kouichi
Institute Of Materials Science University Of Tsukuba
-
Murakami Kouichi
Institute Of Applied Physics University Of Tsukuba
-
Seki S
Department Of Industrial Chemistry Graduate School Of Engineering Tokyo Institute Of Polytechnics
-
Takita Koki
Institute For Materials Science University Of Tsukuba
-
Shima Kunihiro
Institute Of Applied Physics University Of Tsukuba
-
Kudo Hiroshi
Institute of Applied Physics, University of Tsukuba
-
MURAKAMI Kouichi
Institute of Materials Science, University of Tsukuba
関連論文
- Optical Properties of Electron Center in Layered Ionic Crystals (C_nH_NH_3)_2MnCl_4:n=1,2,3 Irradiated with X-Rays at 15K
- Measurement of a Cross Section for the ^Al (p,3pn)^Na Reaction at 12 GeV
- Thermopower in Pr_Ca_xMnO_3 : Condensed Matter: Electronic Properties, etc.
- Dielectric Spectra in Charge Ordeing State of Pr_Ca_xMnO_3
- Mn^ Internal Emission Excitonic Emission of MBE-Grown Cd_Mn_xTe : Dependence on Substrate Temperature and Magnetic Field
- Cooling and Excitation Tests of a Thin 1 mφ×1 m Superconducting Solenoid Magnet
- Measurement of Propagation Velocities of the Normal Zone in a 1 mφ×1 m Superconducting Solenoid Magnet
- Strong Wavelength Dependence of Laser Ablation Fragments of Superconductor YBa_2Cu_3O_y
- Laser Excitation Effects on Laser Ablated Particles in Fabrication of High T_c Superconducting Thin Films
- Magnetophonon Resonance Recombination of Heated Carriers with Emission of Two TA Phonons in LPE-Hg_Mn_xTe
- Y-Ba-Cu Oxide Films Formed with Pulsed-Laser Induced Fragments : Electrical Properties of Condensed Matter
- Energy Beam Irradiation of High-T_c Superconductors Y_1Ba_2Cu_3O_ and Ho_1Ba_2Cu_3O_
- Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
- Measurement of Lattice Temperature during Pulsed-Laser Annealing by Time-Dependent Optical Reflectivity
- Energy Spectra of Electrons Induced by MeV Atom Clusters
- Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma
- Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma (特集 量子ビームによるナノバイオエレクトロニクス)
- Electro- and Thermomigration of Metallic Islands on Si(100) Surface
- Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
- Anger Electron Emission under Jon-Beam Shadowing Conditions
- Crystal Structure of the HoBa_2Cu_3O_x Superconductor Determined by X-Ray Powder Diffraction
- Comment on the de Haas-van Alphen Effect in the Superconducting Mixed State of 2H-NbSe_2
- Optical Study of Phonon-Mediated Carrier Relaxation in CdTe/ZnTe Self-Assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy
- Relation of T_c with Hole Concentration in Ln_Ba_Cu_3O_ (Ln=Sm and Eu); Hall Effect Measurement and Chemical Analysis
- Relation between Superconducting T_c and Hole Concentration: Hall Effect Measurement and Chemical Analysis in Charge-Doped and Oxygen-Doped System Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Variation of SUperconducting Properties with Hole Concenntration in the Solid Solution Systems of Sm_Ba_Cu_3O_ and Eu_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Correlation of T_c with Hole Concentration in Copper-Oxide Superconductors; Hall Effect Measurement in Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Magnetic Quantum Oscillations Due to Auger Recombination and Shockley-Read Recombination Processes in n-Hg_Cd_xTe
- Hole Concentration Compensation Effect and Superconducting Properties of Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- X-Ray Diffraction Study on the Crystal Structure of Nd_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- Upper Critical Field and its Anisotropy of EuBa_2Cu_3O_ and GdBa_2Cu_3O_ Studied in Preferentially Oriented Pellets
- Crystal Structure of Ba_2ErCu_3O_ Determined by Neutron Powder Diffraction
- Studies on Anisotropic Upper Critical Fields of HoBa_2Cu_3O_ and ErBa_2Cu_3O_ Using Preferentially Oriented Pellets
- Crystal Structure of the High T_c Superconductor LnBa_2Cu_3O_ (Ln=Sm, Eu and Gd)
- Crystal Structure of Ba_2HoCu_3O_ Determined by Neutron Powder Diffraction
- Anisotropic Upper Critical Fields of Orthorhombic Single Phase YBa_2Cu_3O_ Studied Using Preferentially Oriented Pellets
- Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
- MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
- Visible Light Emission from SiO_x Films Synthesized by Laser Ablation
- Light Emission from Nanometer-Sized Silicon Particles Fabricated by the Laser Ablation Method
- Shadowing Pattern Imaging with High-Energy Secondary Electrons Induced by Fast Ions
- Formation Mechanism of Interstitial Hydrogen Molecules in Crystalline Silicon
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS
- Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
- Correlation between X-Ray Reflectivity and Rutherford Backscattering Spectroscopy for Density Measurement of Thin Films
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- High Magnetic Field Effect on Exciton Energies in CdTe/Cd_Mn_xTe Quantum Wells Grown by MBE
- Superconductivity Transition in High-T_c Y-Ba-Cu-O Mixed-Phase System
- Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
- Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Preparation and Time-Resolved Photoluminescenee Study of CdTe/Cd_Mn_xTe Single Quantum Wells
- Volume Expansion and Ag Doping Amounts in the Photodoping Process in Amorphous As_2S_3
- Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar^+
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
- Surface Layer Analysis of Sputter-Etched Si Using Secondary Electrons Induced by Fast Ions
- Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation
- Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons
- Elastic Recoil Detection Analysis of Hydrogen Content in Hydrogenated Amorphous Silicon Fims
- Initial Stage of the Interfacial Reaction between Nickel and Hydrogenated Amorphous Silicon
- Thermal Stability of Hg_Cd_xTe Crystals Covered with the Anodic Oxide Films
- Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
- Femtosecond Pulse Delivery through Long Multimode Fiber Using Adaptive Pulse Synthesis
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
- Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
- Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor
- Electron Irradiation Effects on a Ba_2YCu_3O_7 Superconductor : Electrical Properties of Condensed Matter
- Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
- Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
- A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
- Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
- Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- Rotation of Optically Trapped Particles in Air
- Forces of a Single-Beam Gradient-Force Optical Trap on Dielectric Spheroidal Particles in the Geometric-Optics Regime
- Surface Steps Observed in a Dry Annealed z-Cut LiNbO_3 Substrate
- Sharp Superconductivity Transition at 94 K in HoBa_2Cu_3O_ and ErBa_2Cu_3O_
- Superconducting Upper Critical Field H_ of High-T_c Y-Ba-Cu-O Compound System
- Two-Dimensional Near-Field Optical Spectroscopy in Magnetic Fields up to 4T
- Strong Dependence of Hydrogen Passivation on Donor Concentration and on Donor Depth Profile in Silicon
- Shallow Donor Clusters in InP
- Effect of Rapid Solid-Phase Epitaxy of P^+-Implanted Amorphous GaAs and GaAs/Si by Laser Beam Heating
- Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements : Electrical Properties Condensed Matter
- Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy
- Suppression Mechanism of Electron Emission under Fast Cluster Impact on Solids
- Energy Spectra of Electrons Induced by MeV Atom Clusters
- Crystal Structure of Ba2HoCu3O7-x Determined by Neutron Powder Diffraction