Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-03-01

著者

• Itoh Hisayoshi

  Institute Of Materials Science University Of Tsukuba

• Nakamura Nobuo

  Central Research Laboratory Hitachi Ltd.

• Nakamura N

  Tokyo Inst. Technol. Yokohama Jpn

• Itoh H

  Semiconductor Academic Research Center

• Nakamura Noboru

  Functional Materials Research Center Sanyo Electric Co. Ltd.

• Saitoh Tadashi

  Central Research Laboratory Hitachi Ltd.

• WARABISAKO Terunori

  Central Research Laboratory

• Itoh Hitoshi

  Semiconductor Academic Research Center

• Nakamura N

  Department Of Information Processing Tokyo Institute Of Technology

• Muramatsu S

  Univ. Tokyo Tokyo Jpn

• MATSUBARA Sunao

  Central Research Laboratory, Hitachi Ltd.

• ITOH Haruo

  Central Research Laboratory, Hitachi Lid.

• TOKUYAMA Takashi

  Central Research Laboratory

• Matsubara Sunao

  Central Research Laboraotry

• Tokuyama Takashi

  Central Research Laboratory Hitachi Ltd.

• Muramatsu S

  Hitachi Cable Ltd. Ibaraki Jpn

• Saitoh Tadashi

  Central Research Laboratory

• Itoh Haruo

  Central Research Laboratory Hitachi Ltd.

• Saitoh Tadashi

  Central Research Laboraotry

関連論文

• Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
• Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
• Electro- and Thermomigration of Metallic Islands on Si(100) Surface
• Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
• Anger Electron Emission under Jon-Beam Shadowing Conditions
• Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in silicon Solar Cells
• Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
• MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
• Trapping and Recormbination of Photogenerated Carriers in As-Growrn High-Temperature-Annealed and Light-Soaked a-Si:H
• Laser Patterning Method for Integrated Type a-Si Solar Cell Submodules
• Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
• High-Performance a-SiGe Solar Cells Using a Super Chamber Method
• Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
• Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
• Reduction of Gap State Density in a-SiGe:H Alloys
• Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• Nature and Annealing Behavior of Disorders in Ion Implanted Silicon
• Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
• Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
• Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
• Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
• Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
• Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
• Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
• Stable, Metastable and Charged Dangling Bonds in Transient Light-Induced ESR of Undoped a-Si:H
• Irradiation-Temperature Dependence of the Light-Induced Effect in a-Si Solar Cells
• Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
• Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
• Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
• Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells
• A New Analytical Method of Amorphous Silicon Solar Cells
• Recording Characteristics of Ge Doped Eutectic SbTe Phase Change Discs With Various Compositions and Its Potential for High Density Recording
• Light-Induced Effect of a-Si Films Fabricated Using the Super Chamber
• Deposition of Silicon Nitride Films by Microwave Glow Discharge
• Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
• Femtosecond Pulse Delivery through Long Multimode Fiber Using Adaptive Pulse Synthesis
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
• Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
• Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor
• Electron Irradiation Effects on a Ba_2YCu_3O_7 Superconductor : Electrical Properties of Condensed Matter
• High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
• Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
• Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
• A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
• Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
• Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
• Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
• Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2/Si(111) with Rapid Thermal Anneal
• Improvement in Parameter Spreads of YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions
• YBa_2Cu_3O_x Crossover Structures Using CeO_2 Film as Insulating Layer
• Scaling Behavior of YBaCuO/PrBaCuO/YBaCuO Trilayer Josephson Junctions
• Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
• Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation
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• Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -Znsse on GaAs
• Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
• Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
• Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
• very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
• Optical Reflectivity Studies of Damage in Ion Implanted Silicon
• Optimization of High-Efficiency n^+-p-p^+ Back-Surface-Field Silicon Solar Cells
• Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
• Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
• Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
• Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Chemical and Physical Sputtering in F^+ Ion Beam Etching of Si
• Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
• Microplasmas in Alloyed Germanium P-N Junctions
• Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
• Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
• Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
• Optoelectric Characteristics of a-Si/a-SiC Superlattice-Structure Films and Devices Fabricated by the Photo-CVD Method
• The Effect of Nonuniform Doping Density on Electron States in n-Type Si Inversion Layers
• Model for a Quartz-Crystal Tuning Fork Using Torsion Spring at the Joint of the Arm and the Base and Analysis of Its Frequency
• Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
• Czochralski Growth of Square Silicon Single Crystals
• High-Quality p-Type a-SiC Films Obtained by Using a New Doping Gas of B(CH3)3
• Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in Silicon Solar Cells
• The Influence of the Si–H2 Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells
• Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
• Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure

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