Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-08-15

著者

• KITATANI Takeshi

  Central Research Laboratory, Hitachi, Ltd.

• KITATANI Takeshi

  RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.

• Yazawa Yoshiaki

  Central Research Laboratory, Hitachi Ltd.

• Tamura Koji

  Department Of Materials Science Tokai Research Establishment Japan Atomic Energy Research Institute

• Tamura K

  Japan Atomic Energy Res. Inst. Ibaraki Jpn

• WARABISAKO Terunori

  Central Research Laboratory

• Kinoshita Takayuki

  The Institute For Solid State Physics The University Of Tokyo:(present Sddress)fujisawa Development

• Kasuga T

  Department Of Materials Science Faculty Of Science Hiroshima University:(present Address) National L

• WATAHIKI Seiji

  Central Research Laboratory, Hitachi, Ltd.

• TAMURA Katsumi

  Central Research Laboratory, Hitachi, Ltd.

• MINEMURA Junko

  Central Research Laboratory, Hitachi, Ltd.

• Watahiki Seiji

  Central Research Laboratory Hitachi Ltd.

• Minemura Junko

  Central Research Laboratory Hitachi Ltd.

• Yazawa Y

  Hitachi Ltd. Tokyo Jpn

• Yazawa Yoshiaki

  Central Research Laboratory Hitachi Ltd.

• Kitatani T

  Hitachi Ltd. Central Research Laboratory

• Kitatani Takeshi

  Central Research Laboratory Hitachi Ltd.

• Warabisako T

  Central Research Laboratory Hitachi Ltd.

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
• Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
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• Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
• Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in silicon Solar Cells
• Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
• Ion Collection from Photoionized Plasma with a Wire Electrode in a Weak Magnetic Field
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• Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
• Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Welts
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• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Infrared Absorption Spectrum of GaInNAs
• Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Double RF System for Suppression of Longitudinal Coupled Bunch Instability on UVSOR Storage Ring
• Bunch Lengthening in Single-Bunch Mode of UVSOR Storage Ring : Techniques, Instrumentations and Measurement
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• The Effect of Field Error of an Undulator Magnet on the Tune
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• Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
• Infrared Absorption Spectrum of GaInNAs
• Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure

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