GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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概要

• 論文の詳細を見る

• We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Kondow Masahiko

  Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.

• Niwa Atsuko

  Central Research Laboratory Hitachi Ltd.

• Uomi Kazuhisa

  Central Research Laboratory Hitachi Ltd.

• Watahiki Seiji

  Central Research Laboratory Hitachi Ltd.

• Yazawa Yoshiaki

  Central Research Laboratory Hitachi Ltd.

• Kitatani Takeshi

  Central Research Laboratory Hitachi Ltd.

• Kitatani Takeshi

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan

• Kondow Masahiko

  RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd.,

• Yazawa Yoshiaki

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan

• Uomi Kazuhisa

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan

• Niwa Atsuko

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan

• Watahiki Seiji

  Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan

関連論文

• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
• Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
• Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
• Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
• Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
• In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
• Improved Self-Aligned Structure for GaAlAs High-Power Lasers
• A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
• Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
• Very-Low-Current and High-Speed Switching Operation of InAlGaAs/InAlAs/InP Mach-Zehnder Interferometer-Type Photonic Switch
• Direct Wafer Bonding Technique Aiming for Free-Material and Free-Orientation Integration of Semiconductor Materials
• Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
• Index-Guide GaInNAs Laser Diode for Optical Communications
• GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Compact and Low-Power-Consumption 40-Gbit/s, 1.55-μm Electro-Absorption Modulators(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
• Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained Quantum Well Lasers with a Modulation-Doped Structure
• Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
• Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum Wells
• High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
• Photosensing Resolution of Wireless Communication Chip in Inhomogeneous RF-Magnetic Field
• Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : II. Experiment
• Proposal on Reducing the Damping Constant in Semiconductor Lasers by Using Quantum Well Structures
• High Relaxation Oscillation Frequency (beyond 10 GHz) of GaAlAs Multiquantum Well Lasers
• Characterization of the Refractive Index of Lateral-Oxidation-Formed Al_xO_y by Spectroscopic Ellipsometry
• In situ Annealing of GaInNAs up to 600°C
• Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : I. Theory
• Fabrication of -Oriented Si Film with a Ni/Ti Layer by Metal Induced Crystallization : Semiconductors
• Gas-Source Molecular Beam Epitaxy of GaN_xAs_ Using a N Radical as the N Source
• First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers
• Estimation of Low Ga-Content (Less Than 10%) in A1GaAs by Spectroscopic Ellipsometry
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Radio Frequency Identification Sensor Chips with Anticollision Algorithm for Simultaneous Detection of Multiple DNA Targets
• Wide-Tuning-Wavelength-Range LGLC Laser with Low-Loss Dual-Core Spot Size Converter
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
• Infrared Absorption Spectrum of GaInNAs
• Lasing Operation of InGaAsP-Based InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers with a Strain-Compensated Active Region

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