Kondow Masahiko | Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
スポンサーリンク
概要
- 同名の論文著者
- Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.の論文著者
関連著者
-
Kondow Masahiko
Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
-
Kondow M
Central Research Laboratory Hitachi Ltd.
-
KONDOW Masahiko
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
-
Kondow M
Hitachi Ltd. Tokyo Jpn
-
Kondow Masahiko
Graduate School Of Engineering Osaka University
-
KITATANI Takeshi
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
-
Kitatani Takeshi
Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
-
Kitatani T
Hitachi Ltd. Central Research Laboratory
-
Yazawa Yoshiaki
Central Research Laboratory Hitachi Ltd.
-
Yazawa Yoshiaki
Central Research Laboratory, Hitachi Ltd.
-
Okai Makoto
Central Research Laboratory, Hitachi Ltd.
-
Okai M
Hitachi Ltd. Tokyo Jpn
-
Yazawa Y
Hitachi Ltd. Tokyo Jpn
-
Nakatsuka S
Central Research Laboratory Hitachi Ltd.
-
Kitatani Takeshi
Central Research Laboratory Hitachi Ltd.
-
KUDO Makoto
Central Research Laboratory, Hitachi, Ltd.
-
KITATANI Takeshi
Central Research Laboratory, Hitachi, Ltd.
-
NAKAHARA Koji
RWCP Optical Interconnection Hitachi Laboratory
-
Kudo Makoto
Central Research Lab. Hitachi Ltd.
-
Uomi Kazuhisa
Central Research Laboratory Hitachi Ltd.
-
Uomi Kazuhisa
Central Research Laboratory, Hitachi Ltd.
-
LARSON M.C.
Central Research Laboratory,Hitachi, Ltd.
-
SHINODA Kazunori
o Central Research Laboratory, Hitachi, Ltd.
-
SHIRAKATA Sho
Faculty of Engineering Science, Osaka University
-
UOMI Kazuhisa
The author is with Optical Device Department, Telecommunications System Group, Hitachi Ltd.
-
Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
TANAKA Toshiaki
o Central Research Laboratory, Hitachi, Ltd.
-
KITATANI Takeshi
o Central Research Laboratory, Hitachi Ltd.
-
NAKAHARA Kouji
RWCP Optoelectronics Hitachi Laboratory, c
-
Niwa Atsuko
Central Research Laboratory Hitachi Ltd.
-
Larson M.c.
Central Research Laboratory Hitachi Ltd.
-
Uomi K
The Author Is With Optical Device Department Telecommunications System Group Hitachi Ltd.
-
Shirakata Sho
Faculty Of Engineering Ehime University
-
Watahiki Seiji
Central Research Laboratory Hitachi Ltd.
-
Shinoda Kazunori
O Central Research Laboratory Hitachi Ltd.
-
Nakahara Kouji
Fundamental And Environmental Research Laboratories Nec Corporation
-
Nakatsuka Shin′ichi
Central Research Lab. Hitachi Ltd.
-
Nakatsuka Shin′ichi
o Central Research Laboratory, Hitachi, Ltd.
-
Kitatani Takeshi
RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
-
Kitatani Takeshi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan
-
Kondow Masahiko
RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
-
Kondow Masahiko
RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd.,
-
Yazawa Yoshiaki
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan
-
Uomi Kazuhisa
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan
-
TANAKA Toshiaki
o Central Research Laboratory, Hitachi Ltd.
-
Niwa Atsuko
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan
-
KONDOW Masahiko
RWCP Optoelectronics Hitachi Laboratory, c
-
Watahiki Seiji
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185, Japan
著作論文
- Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
- Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
- A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
- Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Characterization of the Refractive Index of Lateral-Oxidation-Formed Al_xO_y by Spectroscopic Ellipsometry
- In situ Annealing of GaInNAs up to 600°C
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance