Kondow Masahiko | Graduate School Of Engineering Osaka University
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概要
関連著者
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Kondow Masahiko
Graduate School Of Engineering Osaka University
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Kondow M
Hitachi Ltd. Tokyo Jpn
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Kondow M
Central Research Laboratory Hitachi Ltd.
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KITATANI Takeshi
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
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Kitatani T
Hitachi Ltd. Central Research Laboratory
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KONDOW Masahiko
RWCP Optical Interconnection Hitachi Laboratory co Central Research Laboratory, Hitachi, Ltd.
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Kondow Masahiko
Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
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Ishikawa Fumitaro
Graduate School Of Electronics And Information Engineering Hokkaido University
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Kitatani Takeshi
Rwcp Optical Interconnection Hitachi Laboratory C-o Central Research Laboratory Hitachi Ltd.
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KONDOW Masahiko
Central Research Laboratory, Hitachi, Ltd.
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KITATANI Takeshi
Central Research Laboratory, Hitachi, Ltd.
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Yazawa Yoshiaki
Central Research Laboratory, Hitachi Ltd.
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Okai Makoto
Central Research Laboratory, Hitachi Ltd.
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Okai M
Hitachi Ltd. Tokyo Jpn
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Yazawa Y
Hitachi Ltd. Tokyo Jpn
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Yazawa Yoshiaki
Central Research Laboratory Hitachi Ltd.
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NAKAHARA Koji
RWCP Optical Interconnection Hitachi Laboratory
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Wu Shudong
Graduate School Of Engineering Osaka University
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Mochizuki Masaya
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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KUDO Makoto
Central Research Laboratory, Hitachi, Ltd.
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SHIRAKATA Sho
Faculty of Engineering Science, Osaka University
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UOMI Kazuhisa
The author is with Optical Device Department, Telecommunications System Group, Hitachi Ltd.
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Kondow Masahiko
Osaka Univ. Osaka Jpn
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Uchiyama Masayuki
Graduate School Of Engineering Osaka University
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Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
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TANAKA Toshiaki
o Central Research Laboratory, Hitachi, Ltd.
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Uomi K
The Author Is With Optical Device Department Telecommunications System Group Hitachi Ltd.
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Nakatsuka S
Central Research Laboratory Hitachi Ltd.
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Nakahara Kouji
Fundamental And Environmental Research Laboratories Nec Corporation
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Kato Masakazu
Graduate School Of Engineering Osaka University
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Kitabayashi Yuta
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Uomi Kazuhisa
Central Research Laboratory, Hitachi Ltd.
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Ikari Tetsuo
Faculty Of Engineering University Of Miyazaki
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Higashi Kotaro
Graduate School Of Engineering Osaka University
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WU Shudong
Graduate School of Engineering, Osaka University
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UCHIYAMA Masayuki
Graduate School of Engineering, Osaka University
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KONDOW Masahiko
Graduate School of Engineering, Osaka University
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Kondow Masahiko
Central Research Laboratory Hitachi Ltd.
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Kudo Makoto
Central Research Lab. Hitachi Ltd.
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Morifuji Masato
Graduate School Of Engineering Osaka University
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Tanaka T
Kddi R & D Laboratories Inc.
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Uomi Kazuhisa
Central Research Laboratory Hitachi Ltd.
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Kitatani Takeshi
Central Research Laboratory Hitachi Ltd.
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Kondow Masahiko
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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TANAKA Toshiaki
o Central Research Laboratory, Hitachi Ltd.
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AOKI Masahiro
Central Research Laboratory, Hitachi, Ltd.
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TSUJI Shinji
Central Research Laboratory, Hitachi, Ltd.
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Kikawa Takeshi
Central Research Laboratory, Hitachi Ltd.
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LARSON M.C.
Central Research Laboratory,Hitachi, Ltd.
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SHINODA Kazunori
o Central Research Laboratory, Hitachi, Ltd.
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MIZUNO Masataka
Graduate School of Engineering, Osaka University
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Ikari T
Miyazaki Univ. Miyazaki Jpn
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Ikari Tetsuo
Department Of Electronic Engineering Miyazaki University
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Ikari Tetsuo
Faculty Of Engineering Miyazaki University
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Araki Hideki
Graduate School Of Bioagricultural Sciences Nagoya University
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KATO Masakazu
Graduate School of Engineering, Osaka University
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ISHIKAWA Fumitaro
Graduate School of Engineering, Osaka University
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Aoki M
Hitachi Ltd. Central Research Laboratory
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Imai Kenji
Department of Cardiology, Nagoya University Graduate School of Medicine
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TANAKA Toshiaki
The authors are with NTT Wireless Systems Laboratories
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Hara Makoto
Graduate Student Aoyama Gakuin University
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KITATANI Takeshi
The authors are with RWCP Optical Interconnection Hitachi Laboratory, c
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KONDOW Masahiko
o Central Research Laboratory, Hitachi, Ltd.
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NAKAHARA Kouji
The authors are with RWCP Optical Interconnection Hitachi Laboratory, c
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NAKAHARA Kouji
o Central Research Laboratory, Hitachi, Ltd.
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UOMI Kazuhisa
RWCP Optical Interconnection Hitachi Laboratory, c
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KITATANI Takeshi
o Central Research Laboratory, Hitachi Ltd.
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NAKAHARA Kouji
RWCP Optoelectronics Hitachi Laboratory, c
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Larson M.c.
Central Research Laboratory Hitachi Ltd.
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Shirakata Sho
Faculty Of Engineering Ehime University
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Aoki M
Univ. Tsukuba Shizuoka Jpn
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Kikawa Takeshi
Central Research Laboratory Hitachi Ltd.
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FUKUYAMA Atsuhiko
Faculty of Engineering, Miyazaki University
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Fukuyama Atsuhiko
Faculty Of Engineering University Of Miyazaki
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Fukuyama Atsuhiko
Faculty Of Engineering Miyazaki University
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MOMOSE Hideki
Graduate School of Engineering, Osaka University
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FUKUSHIMA Shin-ichi
Faculty of Engineering, University of Miyazaki
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Ishikawa Fumitaro
Osaka Univ. Osaka Jpn
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FUKUSHIMA Shin-ichi
Department of Electrical and Electronic Engineering, Miyazaki University
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Shinoda Kazunori
O Central Research Laboratory Hitachi Ltd.
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Momose Hideki
Graduate School Of Engineering Osaka University
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Fukushima Shin-ichi
Faculty Of Engineering University Of Miyazaki
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Goto Hiroaki
Graduate School Of Engineering Doshisha University
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KONDOW Masahiko
The authors are with RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laborator
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Nakatsuka Shin′ichi
Central Research Lab. Hitachi Ltd.
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Nakatsuka Shin′ichi
o Central Research Laboratory, Hitachi, Ltd.
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Shirai Yasuharu
Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Wu Shudong
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Ohshima Yushi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakamoto Hiroki
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yabuuchi Atsushi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Mizuno Masataka
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Aoki Hidemitsu
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Aoki Hidemitsu
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kimura Chiharu
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Sugino Takashi
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kato Masakazu
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakao Ryo
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Satoi Daiki
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Sugino Takashi
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nakajima Tomoya
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kukita Kentaro
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nagatomo Hiroshi
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nakano Katsunari
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kondow Masahiko
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Higashi Kotaro
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Fukuyama Atsuhiko
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Morifuji Masato
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamada Takahiro
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hirai Yuichiro
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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KONDOW Masahiko
RWCP Optoelectronics Hitachi Laboratory, c
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Uchiyama Masayuki
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Goto Hiroaki
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Araki Hideki
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Ishikawa Fumitaro
Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Ishikawa Fumitaro
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hara Makoto
Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
著作論文
- Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
- Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
- Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
- Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
- Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
- Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
- A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
- Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
- Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
- Unintentional source incorporation in plasma-assisted molecular beam epitaxy
- Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
- Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
- Infrared Absorption Spectrum of GaInNAs
- Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
- Index-Guide GaInNAs Laser Diode for Optical Communications
- Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
- Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
- Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
- Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
- Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
- Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)