Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy

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Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
Index-Guide GaInNAs Laser Diode for Optical Communications
Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
Unintentional source incorporation in plasma-assisted molecular beam epitaxy
Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
Infrared Absorption Spectrum of GaInNAs
Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
Index-Guide GaInNAs Laser Diode for Optical Communications
Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs
Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)
Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs

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