Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study

スポンサーリンク

概要

• 論文の詳細を見る

• We study the annealing behavior of GaNAs by positron annihilation spectroscopy and photoluminescence spectroscopy. The introduction of nitrogen reduces the $S$-parameter of the material, which is further lowered by annealing. Moreover, the samples show typical optical characteristics of the GaNAs system. The results suggest that the observed reduction of the $S$-parameter is not simply due to the reduction of vacancy-type defects, but could be related to the characteristic carrier localization in this material system.

• 2011-04-25

著者

• MIZUNO Masataka

  Graduate School of Engineering, Osaka University

• Araki Hideki

  Graduate School Of Bioagricultural Sciences Nagoya University

• Kondow Masahiko

  Graduate School Of Engineering Osaka University

• Ishikawa Fumitaro

  Graduate School Of Electronics And Information Engineering Hokkaido University

• Shirai Yasuharu

  Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

• Ohshima Yushi

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Nakamoto Hiroki

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Yabuuchi Atsushi

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Mizuno Masataka

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Araki Hideki

  Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
• Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• Detection of Neodymium-Rich Phase for Development of Coercivity in Neodymium-Iron-Boron-Based Alloys with Submicron-Sized Grains Using Positron Lifetime Spectroscopy
• Molecular Dynamics Study of Glass-Forming Ability of Zr-Based Metallic Glasses
• Relationship between Coercivity and Microstructural Changes During DR Treatment in the HDDR-processed Nd-Fe-Co-B Alloy
• First Principles Calculation of Defect and Magnetic Structures in FeCo
• First Principles Calculation of Defect Structure in Non-stoichiometric CoAl and CoTi
• Theoretical Calculations of Positron Lifetimes for Metal Oxides
• Fermi Surface of a Shape Memory Alloy of TiNi(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
• Deep Rooting in Winter Wheat : Rooting Nodes of Deep Roots in Two Cultivars with Deep and Shallow Root Systems
• Which Roots Penetrate the Deepest in Rice and Maize Root Systems?
• Physiol-Morphological Analysis on Axile Root Growth in Upland Rice
• Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
• A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
• Electronic Structures and Chemical Bonding of TiX_2 (X=S, Se, and Te)
• Electronic Structure and Chemical Bonding of TiS_2 by Cluster Calculation
• Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
• Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
• Unintentional source incorporation in plasma-assisted molecular beam epitaxy
• Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Infrared Absorption Spectrum of GaInNAs
• Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Transport Properties in Molten Silver Iodide
• Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
• Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
• Hydrogen-Induced Vacancy Generation Phenomenon in Pure Pd
• Positron Lifetime Study of Defect Structures in B2 Ordered Co-Al Alloys
• Anomalous Temperature Changes of Positron Lifetime and Electrical Resistivity in B2-NiTi Alloys
• Theoretical Calculation of Positron Lifetimes in CoAl and CoTi
• Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
• Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
• Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
• Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
• Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
• Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs
• Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)
• Formation of Minibands on Superlattice Structure with Periodically Arranged \delta-Doped Nitrogen into GaAs

もっと見る 閉じる

スポンサーリンク