Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots

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概要

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• Attempts were made to optimize the parameters of the electrochemical process to form uniform nanopore arrays and utilize them as templates for molecular beam epitaxy (MBE) growth of InP-based quantum wires and quantum dots. Template parameters such as pore depth, diameter and period were strongly dependent on anodization conditions. In particular, in the pulsed anodization mode, the pore depth could be well controlled in the nanometer range by adjusting the number of the applied pulses. InGaAs MBE growth was attempted using the nanopore templates. Growth of InGaAs in pores occurred at a substantial depth of about 20-60 nm. The measured photoluminescence (PL) spectra had a new peak at about 1.2 eV in addition to the PL emission from the InP substrate and that from the InGaAs top layer. The new peak was tentatively assigned to the peak arising from InGaAs quantum wire arrays embedded in InP pores with a possible alloy composition change.

• 社団法人応用物理学会の論文
• 2002-02-28

著者

• Ishikawa Fumitaro

  Graduate School Of Electronics And Information Engineering Hokkaido University

• Ito A

  Graduate School Of Electronics And Information Engineering Hokkaido University

• Ito Akira

  Graduate School Of Engineering Kyushu University

• Sato Taketomo

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• HASEGAWA Hideki

  Graduate School of Electronics and Information Engineering and Research Center for Integrated Quantu

• Sato T

  Mitsubishi Chemical Corporation

• HIRANO Tetsuro

  Graduate School of Electronics and Information Engineering, Hokkaido University

• SAT0 Taketomo

  Research Center for Integrated Quantum Electronics, Hokkaido University

• Sat0 Taketomo

  Research Center For Integrated Quantum Electronics Hokkaido University

• Hirano T

  Graduate School Of Electronics And Information Engineering Hokkaido University

• Hasegawa Hideki

  Graduate School Of Electronics And Information Engineering Hokkaido University:research Center For I

• Hasegawa Hideki

  Graduate School of Electronics and Information Engineering and Research Center for

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