Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
Deep levels in low-temperature (LT) GaAs layers grown by molecular beam epitaxy were investigated by deep level transient spectroscopy (DLTS), photocapacitance and photoluminescence (PL) techniques. Five electron traps were detected, for the first time, in Si-doped conductive LT-GaAs layers grown at 300–400°C. The dominant trap was found to be the S1 level with an activation energy of 0.64 eV and an electron capture cross section of σ n=2–4×10-14 cm2. The S1 level showed remarkable photoquenching behavior. No PL was observed from LT-layers. The mechanism responsible for the semi-insulating property of LT-GaAs layers is probably due to compensation by the S1 trap, which is not EL2 but a new electron trap peculiar to LT-GaAs layers.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
-
Hasegawa Hideki
Graduate School of Electronics and Information Engineering and Research Center for
-
Hashizume Tamotsu
Graduate School of Electronics and Information Engineering and Research Center for
-
Shiobara Syunsuke
Graduate School of Electronics and Information Engineering and Research Center for
関連論文
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
- Influence of Initial Amorphous Layer Deposition Temperature on Lateral Solid-Phase Epitaxy of Silicon
- Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
- Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
- Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
- Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
- Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates
- Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates
- Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
- Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
- Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures