Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
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概要
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The effects of fabrication processes on the electrical properties of Al2O3/GaN structures prepared by atomic layer deposition were investigated. The annealing process at 800 °C for the formation of ohmic electrodes brought a large number of microcrystallization regions into the Al2O3 layer, causing a marked leakage in the current–voltage characteristics of the Al2O3/GaN structure. The "ohmic-first" process with a SiN protection layer was thus applied to the GaN surface. In this process, the amorphous phase in the atomic configuration of Al2O3 was maintained, leading to the sufficient suppression of leakage current at the Al2O3/GaN interface. In addition, the Al2O3/GaN structures showed good capacitance–voltage characteristics, resulting in low interface state densities of less than $1\times 10^{12}$ cm-2 eV-1.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-08-25
著者
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Hori Yujin
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Mizue Chihoko
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Hori Yujin
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Mizue Chihoko
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Graduate School of Electronics and Information Engineering and Research Center for
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