0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
スポンサーリンク
概要
- 論文の詳細を見る
Pt Schottky barrier diodes (SBDs) with a high Schottky barrier height of 0.86 eV and an ideality factor of near unity were successfully realized by a novel in situ electrochemical process. Applying this novel technique to InP metal semiconductor field effect transistors (MESFETs), good gate control of drain current with pinch-off, an effective channel mobility of 1,840 cm2V-1s-1 and no drain current drift behavior were achieved. The InP MESFET operates even under a positive gate bias, showing feasibility of enhancement-mode operation as well as depletion-mode operation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
-
HASHIZUME Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
-
Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
-
Wu Nan-Jian
Graduate School of Electronics and Information Engineering, and Research Center
-
Hasegawa Hideki
Graduate School of Electronics and Information Engineering and Research Center for
-
Hasegawa Hideki
Graduate School of Electronics and Information Engineering, and Research Center
-
Uno Shouichi
Graduate School of Electronics and Information Engineering, and Research Center
-
Hashizume Tamotsu
Graduate School of Electronics and Information Engineering and Research Center for
-
Hashizume Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center
-
Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
関連論文
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks
- Characterization of low-frequency noise in GaAs nanowire field-effect transistors controlled by Schottky wrap gate (Special issue: Microprocesses and nanotechnology)
- Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
- Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III,AWAD2006)
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III)
- Influence of Initial Amorphous Layer Deposition Temperature on Lateral Solid-Phase Epitaxy of Silicon
- Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
- Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
- Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator
- Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
- Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
- Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates
- Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates
- Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method
- Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
- Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions
- Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
- GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets
- Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures