Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III)

概要

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Binary conductance switching at the first quantized conductance step in Schottky-wrap-gate (WPG)-controlled quantum wire transistors was characterized for the low power operation of the hexagonal binary-decision diagram (BDD) logic quantum circuits. The fabricated devices showed clear conductance quantization and their trace survived up to 80 K. They also exhibited non-linear dependence of logic swing and conductance step height on temperature, which were not explained by the standard one-dimensional transport theory. Analysis on the observed behaviors indicated the appearance of charge-spin separation under a low-electron-density condition in the quantum wire. This also suggests the possibility of 0.5G_0 switching, corresponding to single electron switching, even in quantum wire transistors.
社団法人電子情報通信学会の論文
2006-06-26