Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
KASAI Seiya
Graduate School of Information Science and Technology, Hokkaido University
-
SHIRATORI Yuta
Graduate School of Information Science and Technology, Hokkaido University
-
Shiratori Yuta
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
-
Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
-
Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
関連論文
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks
- Characterization of low-frequency noise in GaAs nanowire field-effect transistors controlled by Schottky wrap gate (Special issue: Microprocesses and nanotechnology)
- Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
- Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III,AWAD2006)
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III)
- Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator
- Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- Voltage Transfer Characteristics in GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method
- Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions
- GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets