GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets
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概要
- 論文の詳細を見る
GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchets were fabricated and characterized. From three-dimensional potential simulation results and current--voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate device or a multiple-symmetric-gate device. The current direction and input frequency dependences of the net current indicated that the observed current was generated by the flashing-ratchet mechanism.
- The Japan Society of Applied Physicsの論文
- 2013-06-25
著者
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Nakano Yuki
Graduate School Of Human And Environmental Studies Kyoto Univ.
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Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
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Tanaka Takayuki
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan
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