Characterization of low-frequency noise in GaAs nanowire field-effect transistors controlled by Schottky wrap gate (Special issue: Microprocesses and nanotechnology)
スポンサーリンク
概要
著者
-
Shiratori Yuta
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
-
Shiratori Yuta
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
-
Miura Kensuke
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
-
Kasai Seiya
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
-
Miura Kensuke
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-0814, Japan
-
Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
関連論文
- Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network
- Characterization of low-frequency noise in GaAs nanowire field-effect transistors controlled by Schottky wrap gate (Special issue: Microprocesses and nanotechnology)
- Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
- Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III,AWAD2006)
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III)
- Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits
- Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator
- Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- Boolean Logic Gates Utilizing GaAs Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- Voltage Transfer Characteristics in GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method
- Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions
- Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
- GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets