Boolean Logic Gates Utilizing GaAs Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
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概要
- 論文の詳細を見る
A GaAs-based three-branch nanowire junction (TBJ) with Schottky wrap gates (WPGs) is investigated to realize novel Boolean logic gates. The WPG-controlled TBJ shows a bell-shaped voltage input–output curve and is controlled by gate voltage on the WPGs. The observed characteristics are explained using a simple equivalent circuit model. AND gate operation is realized in the WPG-controlled TBJ and its output voltage swing is controlled using WPGs. It can also operate as a NOT gate by changing the measurement circuit. A NAND gate is fabricated by integrating two WPG-controlled TBJs, and correct operation with a voltage transfer gain of 2.2 is realized.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-06-25
著者
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Shiratori Yuta
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Shiratori Yuta
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan
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Abd Rahman
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan
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Nakata Daisuke
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan
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