Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network

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概要

• 論文の詳細を見る

• Stochastic resonance phenomenon in GaAs-based nanowire field effect transistors (FETs) and their summing network is studied experimentally. Response to a weak signal of a nanowire FET operating in subthreshold region is enhanced by adding noise to gate. The response is further improved by forming a FET summing network and strong input-output correlation is obtained in wide noise voltage range. The effect of device variation in the network is also investigated and it is found to make the system respond the weak signal without tuning noise intensity.

• 社団法人電子情報通信学会の論文
• 2009-06-17

著者

• Asai Tetsuya

  Graduate School Of Information Science And Technology Hokkaido University

• Asai Tetsuya

  Hokkaido Univ. Sapporo Jpn

• Nakata Daisuke

  Graduate School Of Information Science And Technology Hokkaido University:research Center For Integr

• KASAI Seiya

  Graduate School of Information Science and Technology, Hokkaido University

• SHIRATORI Yuta

  Graduate School of Information Science and Technology, Hokkaido University

• Shiratori Yuta

  Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te

• Shiratori Yuta

  Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele

• Kasai Seiya

  Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te

• Kasai Seiya

  Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele

• Kasai Seiya

  Graduate School of Electronics and Information Engineering, and Research Center

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