Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
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概要
- 論文の詳細を見る
Stochastic resonance phenomenon in GaAs-based nanowire field effect transistors (FETs) and their summing network is studied experimentally. Response to a weak signal of a nanowire FET operating in subthreshold region is enhanced by adding noise to gate. The response is further improved by forming a FET summing network and strong input-output correlation is obtained in wide noise voltage range. The effect of device variation in the network is also investigated and it is found to make the system respond the weak signal without tuning noise intensity.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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Asai Tetsuya
Graduate School Of Information Science And Technology Hokkaido University
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Asai Tetsuya
Hokkaido Univ. Sapporo Jpn
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Nakata Daisuke
Graduate School Of Information Science And Technology Hokkaido University:research Center For Integr
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KASAI Seiya
Graduate School of Information Science and Technology, Hokkaido University
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SHIRATORI Yuta
Graduate School of Information Science and Technology, Hokkaido University
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Shiratori Yuta
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Shiratori Yuta
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Kasai Seiya
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
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