A behavioral model of unipolar resistive RAMs and its application to HSPICE integration
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概要
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We propose a behavioral model of unipolar resistive RAMs (ReRAMs). The model integrates three behavioral characteristics of unipolar ReRAMs; i.e., i) ON/OFF resistive switching characteristics for transient voltage pulses, ii) I-V characteristics exhibiting ON/OFF resistive switching with current compliance, and iii) current-compliance dependence of both ON resistance and OFF threshold currents. The model is described by three nonlinear differential equations with several static functions, which enables us to employ the model in any numerical or circuit simulator. As an example, we integrate the model on HSPICE, and show the simulated results using experimental parameters extracted from fabricated ReRAMs of TiO2 thin films.
著者
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KAWAI Tomoji
The Institute of Scientific and Industrial Research, Osaka University
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Amemiya Yoshihito
Graduate School Of Information Sci. & Technol. Hokkaido Univ.
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Asai Tetsuya
Graduate School Of Information Science And Technology Hokkaido University
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Akou Nobuo
Graduate School of Information Science and Technology, Hokkaido University
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Yanagida Takeshi
The Institute of Scientific and Industrial Research, Osaka University
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Kawai Tomoji
The Institute Of Science And Industrial Research (isir-sanken) Osaka University
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