Ferroelectric Field-Control in Pb(Zr_<0.52>Ti_<0.48>)O_3/(Y_<0.6>Pr_<0.4>)Ba_2Cu_3O_y Heterostructures and Their Memory (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)

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Ferroelectric / superconducting Heterostructures of Pb(Zr_<0.52>Ti<0.48>)O_3[PZT] / (Y_<0.6>Pr_<0.4>)Ba_2Cu_3O_y [YPBCO] have been formed on SrTiO_3 (100) substrate using an ArF pulsed laser deposition. The crystallinity and surface morphology of heterostructures were investigated by X-ray diffraction measurements and atomic force microscopy. We also measured dielectric and ferroelectric properties of PZT film in the Au/PZT/YPBCO structure. Furthermore, we fabricated a three-terminal devices having the structure described above using an in-situ metal mask exchange system, and investigated the ferroelectric field effect. As a result, we observed a modulation of channel resistance approximately equal to that estimated from the induced carrier and memory effect due to remanent polarization of PZT.
社団法人電子情報通信学会の論文
1997-10-25