Voltage Transfer Characteristics in GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates

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概要

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• Nonlinear voltage transfer characteristics in GaAs-based three-branch nanowire junctions (TBJs) controlled by Schottky wrap gates (WPGs) are investigated by characterization of the gate voltage and size dependences in detail. WPGs squeezed the nanowires only in the node portion and modulated the curve only in the low-input-voltage region. When the entire nanowire was narrowed geometrically, the voltage transfer curve became abrupt in a wide voltage range. On the other hand, the nanowire length affected only the curve in the high-input-voltage region. These results indicate that the voltage transfer characteristics of the WPG-controlled TBJ device in the low- and high-voltage regions are controlled by the junction node with WPGs and the end of the positively biased nanowire, respectively. The observed behaviors can be understood in terms of a surface-potential-induced field domain model.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-06-25

著者

• Nakata Daisuke

  Graduate School Of Information Science And Technology Hokkaido University:research Center For Integr

• Shiratori Yuta

  Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele

• Yuta Shiratori

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan

• Daisuke Nakata

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan

• Shibata Hiromu

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan

• Seiya Kasai

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan

• Hiromu Shibata

  Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814, Japan

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