Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
スポンサーリンク
概要
- 論文の詳細を見る
The nonlinear electrical characteristics of GaAs-based three-branch nanowire junction (TBJ) devices having Schottky wrap gates (WPGs) are investigated experimentally and theoretically, focusing on the nonlinear mechanism at room temperature in devices with large dimensions and the improvement of voltage transfer efficiency. Input-output voltage transfer curve, V_out-V_in, is characterized by changing nanowire width, W, temperature, T, and WPG gate voltage, VG, systematically. At room temperature, a bell-shaped V_out-V_in voltage curve is observed even in the device having a nanowire width of 1,500 nm, which is ten times larger than the electron mean free path. With decreasing wire width or temperature, the output curves are sharpened and curvature in the low-input-voltage region increases. The curvature rapidly increases and voltage transfer efficiency, ΔV_out/ΔV_in, approaches unity when VG is decreased into the subthreshold region. A simple and compact model for the nonlinear characteristics in the nonballistic regime is introduced. The rapid change of the curvature and complex curve in the subthreshold region under VG control is due to the switching of the branch condition from resistive to capacitive by depletion underneath the WPG.
- Japan Society of Applied Physicsの論文
- 2008-06-25
著者
-
Shiratori Yuta
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
-
Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
-
NAKAMURA Tatsuya
Graduate School of Information Science and Technology, Hokkaido University
-
Abd Rahman
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
-
Shiratori Yuta
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
-
Nakamura Tatsuya
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
-
Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
関連論文
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- Stochastic Resonance in GaAs-based Nanowire Field-Effect Transistors and Their Summing Network
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks
- Characterization of low-frequency noise in GaAs nanowire field-effect transistors controlled by Schottky wrap gate (Special issue: Microprocesses and nanotechnology)
- Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
- Effect of Size Reduction on Operation Temperature and Switching Power in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III,AWAD2006)
- Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III)
- Position measurement for mobile robots using a new acceleration sensor
- Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNx Gate Insulator
- Study on Nonlinear Electrical Characteristics of GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- Voltage Transfer Characteristics in GaAs-Based Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method
- Novel Nanowire-Based Flip-Flop Circuit Utilizing Gate-Controlled GaAs Three-Branch Nanowire Junctions
- GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets