Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks
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概要
- 論文の詳細を見る
Investigation of stochastic resonance in GaAs-based nanowire field-effect transistors (FETs) controlled by Schottky wrap gate and their networks is described. When a weak pulse train is given to the gate of the FET operating in a subthreshold region, the correlation between the input-pulse and source-drain current increases by adding input noise. Enhancement of the correlation is observed in a summing network of the FETs. Measured correlation coefficient of the present system can be larger than that in a linear system in the wide range of noise. An analytical model based on the electron motion over a gate-induced potential barrier quantitatively explains the experimental behaviors.
- Japan Society of Applied Physicsの論文
- 2008-08-25
著者
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Asai Tetsuya
Graduate School Of Information Science And Technology Hokkaido University
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KASAI Seiya
Graduate School of Information Science and Technology, Hokkaido University
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Kasai Seiya
Graduate School Of Information Science And Technology Hokkaido University
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Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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