Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network
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概要
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Stochastic resonance in a summing network with varied thresholds was investigated using GaAs-based etched nanowire field-effect transistors having different threshold voltages. The network's response adapted to input offset fluctuations in the range of the threshold voltage variation and the network could detect a weak signal without any adjustment of the input offset or the addition of high noise. The observed adaptability resulted from a widened dynamic range of the system due to signal decomposition and reconstruction by multiple thresholds together with the output summation process.
- 2010-05-10
著者
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Shiratori Yuta
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Miura Kensuke
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Kasai Seiya
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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