Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
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概要
- 論文の詳細を見る
A novel lateral surface superlattice (LSSL) device structure based on Schottky barrier height (SBH) difference produced by periodic insertion of Si interface control layer (Si ICL) stripes is proposed,fabricated and characterized.Two-dimensional computer simulation was performed first to gain information on basic design considerations. An electron beam induced current (EBIC) study on the fabricated device directly confirmed SBH modulation by Si ICL stripes. The devices showed periodic oscillations of drainconductance and transconductance at low temperatures up to 10K whose behavior was distinctly different from that of previous split-gate devices. The mechanism of these oscillations was explained by a sequential resonant tunneling model. According to a quantitative analysis of the data, SBH difference of 70-150meV was produced at the metalsemiconductor interface and it produced quantized levels with the separation of 2-3meV at heterointerface.
- Japan Society of Applied Physicsの論文
- 1996-02-28
著者
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Kasai Seiya
Research Center for Interface Quantum Electronics and Graduate School of Electronics
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