In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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TSURUMI Naohiro
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Tsurumi Naohiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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MUTOH Morimichi
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Mutoh Morimichi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hashizume Tamotsu
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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