TSURUMI Naohiro | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
スポンサーリンク
概要
- 同名の論文著者
- Research Center for Interface Quantum Electronics and Graduate School of Electronics and Informationの論文著者
関連著者
-
HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
-
TSURUMI Naohiro
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
-
Tsurumi Naohiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
-
Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
-
福井 孝志
北海道大学情報科学研究科および量子集積エレクトロニクス研究センター
-
ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
-
Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
-
Fukui T
Research Center For Integrated Quantum Electronics Hokkaido University
-
Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
-
Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
-
FUKUI Takashi
Research Center for Interface Quantum Electronics, Hokkaido University
-
Ishikawa Y
Hokkaido Univ. Sapporo Jpn
-
Fukui Takashi
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
MUTOH Morimichi
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
-
Mutoh Morimichi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
Hashizume Tamotsu
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
著作論文
- In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
- In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4) Surface
- Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System
- In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs