Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
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TAKAHASHI Hiroshi
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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YAMADA Masatsugu
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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