TAKAHASHI Hiroshi | Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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概要
- 同名の論文著者
- Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informatiの論文著者
関連著者
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TAKAHASHI Hiroshi
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
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YAMADA Masatsugu
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Xie Y
Research Center For Interface Quantum Electronics (rciqe) And Graduate School Of Electronics And Inf
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長谷川 英機
北海道大学量子集積エレクトロニクス研究センター
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XIE Yong
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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XIE Yong-Gui
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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JIANG Chao
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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Takahasi Hiroshi
The Authors Are With Application Specific Products Worldwide Development Dsp Development Japan Tsuku
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Jiang C
Hokkaido Univ. Sapporo Jpn
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Jiang Chao
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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FU Zhengwen
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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JIN Zhi
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University
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Jin Z
Ecole Polytechnique De Montreal Quebec Can
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Fu Zhengwen
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Jin Zhi
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Takahashi H
Graduate School Of Science And Engineering Ehime University
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Yoshikane Takao
Research Institute for Global Change, Japan Agency for Marine-Earth Science and Technology
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Ma Xieyao
Research Institute for Global Change, Japan Agency for Marine-Earth Science and Technology
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Hara Masayuki
Research Institute for Global Change, Japan Agency for Marine-Earth Science and Technology
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Wakazuki Yasutaka
Research Institute for Global Change, Japan Agency for Marine-Earth Science and Technology
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Kimura Fujio
Research Institute for Global Change, Japan Agency for Marine-Earth Science and Technology
著作論文
- Process Charactarization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer
- Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer
- In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2
- Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
- Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well
- X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well
- Hydrological response to future climate change in the Agano River basin, Japan