Yamada M | Mitsubishi Electric Corp. Itami‐shi Jpn
スポンサーリンク
概要
関連著者
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Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
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Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Goto N
Ulsi Research Labolatories R & D Center Toshiba Corporation
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TAKAHASHI Hiroshi
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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YAMADA Masatsugu
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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Mitsuhashi Takashi
Semiconductor Da & Test Center Toshiba Corporation
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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YAMAMOTO Tsuyoshi
Fujitsu Laboratories Ltd.
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Ishida Toru
Materials And Components Research Laboratory Matsushita Electric Industrial Co. Ltd.
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JINNO Masahiko
NTT Network Innovation Laboratories, NTT Corporation
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Kani Jun-ichi
Ntt Network Innovation Laboratories
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Kani Jun-ichi
Ntt Optical Network Systems Laboratories
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SAKAMOTO Tadashi
NTT Photonics Laboratories
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HATTORI Kuninori
NTT Network Innovation Laboratories
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YAMADA Makoto
NTT Photonics Laboratories
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OGUCHI Kimio
NTT Science and Core Technology Laboratory Group
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KANAMORI Terutoshi
NTT Photonics Laboratories Ibaraki
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Fukuma T
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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YAMADA Michihiro
ULSI Development Center, Mitsubishi Electric Corporation
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YASUOKA Akihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Wada Tomohisa
ULSI Laboratory, Mitsubishi Electric Corporation
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Fujii T
Japan Telecom Co. Ltd. Tokyo Jpn
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Fujii T
Nikon Corporation
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Oguchi K
Ntt Science And Core Technol. Lab. Group Atsugi‐shi Jpn
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FUJII Toru
Nikon Corporation
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GOTO Nobuyuki
ULSI Research Labolatories, R & D Center, TOSHIBA CORPORATION
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Yamada Minoru
Faculty of Health Sciences, Kobe University School of Medicine
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Ishikawa Tsutomu
Fujitsu Laboratories Lid.
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Yasuoka Akihiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Ishikawa Toshihiro
The Telecom Research Lab. Matsushita Communication Ind. Co. Ltd.
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Ishida T
Osaka Prefecture Univ. Sakai‐shi Jpn
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HIGASHI Toshio
Fujitsu Laboratories Lid.
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FUJII Takuya
Fujitsu Laboratories Lid.
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SODA Haruhisa
Fujitsu Laboratories Lid.
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Wada T
System Lsi Development Center Mitsubishi Electric Corporation
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Ishikawa T
Microwave Device Development Department Mitsubishi Electric Corporation
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Nojima Reiko
Semiconductor Da & Test Center Toshiba Corporation
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Wada Tomohisa
Ulsi Laboratory Mitsubishi Electric Corporation
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Kojima Naohito
Semiconductor Da & Test Center Toshiba Corporation
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Jinno M
Ntt Network Innovation Lab. Yokosuka‐shi Jpn
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Jinno Masahiko
Ntt Network Innovation Laboratories
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Kanamori T
Research Laboratory Oki Electric Industry Co. Ltd.
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Fujii T
Department Of Electronic Science And Engineering Kyoto University
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Soda H
Fujitsu Laboratories Lid.
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Yamada Michihiro
Ulsi Development Center Mitsubishi Electric Corporation
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Yamamoto T
Graduate School Of Information Science And Technology Hokkaido University
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Kurosawa Sachiko
Semiconductor Da & Test Center Toshiba Corporation
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Yamada Minoru
Faculty Of Engineering Kanazawa University
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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KANAMORI Terutoshi
NTT Science and Core Technology Laboratory Group
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Xie Y
Research Center For Interface Quantum Electronics (rciqe) And Graduate School Of Electronics And Inf
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Tachibana Masayoshi
Semiconductor Da & Test Center Toshiba Corporation
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Yamada Masaaki
Semiconductor Da & Test Center Toshiba Corporation
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XIE Yong
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
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KUROSAWA Sachiko
Semiconductor DA & Test Center, TOSHIBA CORPORATION
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NOJIMA Reiko
Semiconductor DA & Test Center, TOSHIBA CORPORATION
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KOJIMA Naohito
Semiconductor DA & Test Center, TOSHIBA CORPORATION
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MITSUHASHI Takashi
Semiconductor DA & Test Center, TOSHIBA CORPORATION
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Yamada Masaaki
ULSI Research Labs., RampD Center, TOSHIBA CORPORATION
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Kurosawa Sachiko
ULSI Research Labs., RampD Center, TOSHIBA CORPORATION
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Nojima Reiko
ULSI Research Labs., RampD Center, TOSHIBA CORPORATION
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Kojima Naohito
ULSI Research Labs., RampD Center, TOSHIBA CORPORATION
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Mitsuhashi Takashi
ULSI Research Labs., RampD Center, TOSHIBA CORPORATION
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Kuribayashi Mototaka
the Semiconductor Device Engineering Laboratory, TOSHIBA CORPORATION
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Yamada Masaaki
the Research & Development Center, TOSHIBA CORPORATION
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Mitsuhashi Takashi
the Research & Development Center, TOSHIBA CORPORATION
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Goto Nobuyuki
the Research & Development Center, TOSHIBA CORPORATION
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Okamoto Yasuyuki
Daioh Electric Corporation
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SATO Hirotoshi
ULSI Laboratory, Mitsubishi Electric Corporation
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OHBAYASHI Shigeki
Memory IC Division, Mitsubishi Electric Corporation
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KONDOH Setsu
Memory IC Division, Mitsubishi Electric Corporation
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MATSUO Ryuuichi
Memory IC Division, Mitsubishi Electric Corporation
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HARAGUCHI Yoshiyuki
ULSI Laboratory, Mitsubishi Electric Corporation
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HIROSE Toshihiko
Memory IC Division, Mitsubishi Electric Corporation
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UKITA Motomu
ULSI Laboratory, Mitsubishi Electric Corporation
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EINO Masanao
Memory IC Division, Mitsubishi Electric Corporation
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SAITO Minoru
Daioh Electric Corporation
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Eino Masanao
Memory Ic Division Mitsubishi Electric Corporation
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Kondoh Setsu
Memory Ic Division Mitsubishi Electric Corporation
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Ukita Motomu
Ulsi Laboratory Mitsubishi Electric Corporation
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Hirose Toshihiko
Memory Ic Division Mitsubishi Electric Corporation
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Ohbayashi Shigeki
Memory Ic Division Mitsubishi Electric Corporation
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Haraguchi Yoshiyuki
Ulsi Laboratory Mitsubishi Electric Corporation
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Kuribayashi Mototaka
The Semiconductor Device Engineering Laboratory Toshiba Corporation
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Sato Hirotoshi
Ulsi Laboratory Mitsubishi Electric Corporation
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Matsuo Ryuuichi
Memory Ic Division Mitsubishi Electric Corporation
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Saito M
Nihon Univ. Tokyo Jpn
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
著作論文
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Novel 1470-nm-Band WDM Transmission and Its Application to Ultra-Wide-Band WDM Transmission (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Process Charactarization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Power and Area Minimization by Reorganizing CMOS Complex-Gates (Special Section of Selected Papers from the 8th Karuizawa Workshop on Circuits and Systems)
- Synergistic Power/Area Optimization with Transistor Sizing and Wire Length Minimization
- A Hierarchical Global Router for Macro-Block-Embedded Sea-of-Gates (Special Section on VLSI Design and CAD Algorithms)
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Dependence of Gain Characteristics in 1.3-μm AlGaInAs/InP Strained Multiple-Quantum-Well Semiconductor Lasers (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
- Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well
- 111-MHz 1-Mbit CMOS Synchronous Burst SRAM Using a Clock Activation Control Method (Special Issue on ULSI Memory Technology)
- A 4-Mb SRAM Using a New Hierarchical Bit Line Organization Utilizing a T-Shaped Bit Line for a Small Sized Die (Special Issue on ULSI Memory Technology)