Wada Tomohisa | Ulsi Laboratory Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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Wada Tomohisa
ULSI Laboratory, Mitsubishi Electric Corporation
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Wada Tomohisa
Ulsi Laboratory Mitsubishi Electric Corporation
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YAMADA Michihiro
ULSI Development Center, Mitsubishi Electric Corporation
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Wada T
System Lsi Development Center Mitsubishi Electric Corporation
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Yamada Michihiro
Ulsi Development Center Mitsubishi Electric Corporation
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YASUOKA Akihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
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Yasuoka Akihiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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TSUBOUCHI Natsuro
ULSI Laboratory, Mitsubishi Electric Corporation
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JOACHIM Hans-Oliver
ULSI Laboratory, Mitsubishi Electric Corporation
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Takahashi Jun
ULSI Laboratory, Mitsubishi Electric Corporation
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Yamaguchi Takehisa
ULSI Laboratory, Mitsubishi Electric Corporation
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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Inoue Y
National Defense Acad. Yokosuka Jpn
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Joachim Hans-oliver
Ulsi Laboratory Mitsubishi Electric Corporation
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Yamaguchi Y
Central Workshop Osaka University
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Okamoto Yasuyuki
Daioh Electric Corporation
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Tsubouchi Natsuro
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
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Tsubouchi Natsuro
Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Y
Ntt Access Network Service Systems Laboratories Ntt Corporation
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Arita Y
Mitsubishi Electric Corp. Itami‐shi Jpn
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Tsubouchi N
Ulsi Dev. Center Hyogo Jpn
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SATO Hirotoshi
ULSI Laboratory, Mitsubishi Electric Corporation
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OHBAYASHI Shigeki
Memory IC Division, Mitsubishi Electric Corporation
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KONDOH Setsu
Memory IC Division, Mitsubishi Electric Corporation
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MATSUO Ryuuichi
Memory IC Division, Mitsubishi Electric Corporation
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KOZARU Kunihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOSHITA Atsushi
Memory IC Division, Mitsubishi Electric Corporation
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ARITA Yutaka
ULSI Laboratory, Mitsubishi Electric Corporation
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HARAGUCHI Yoshiyuki
ULSI Laboratory, Mitsubishi Electric Corporation
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HIROSE Toshihiko
Memory IC Division, Mitsubishi Electric Corporation
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UKITA Motomu
ULSI Laboratory, Mitsubishi Electric Corporation
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EINO Masanao
Memory IC Division, Mitsubishi Electric Corporation
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SAITO Minoru
Daioh Electric Corporation
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Yamada Michihiro
Ulsi Laboratory Mitsubishi Electric Corporation
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Eino Masanao
Memory Ic Division Mitsubishi Electric Corporation
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Kondoh Setsu
Memory Ic Division Mitsubishi Electric Corporation
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Ukita Motomu
Ulsi Laboratory Mitsubishi Electric Corporation
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Hirose Toshihiko
Memory Ic Division Mitsubishi Electric Corporation
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Ohbayashi Shigeki
Memory Ic Division Mitsubishi Electric Corporation
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Haraguchi Yoshiyuki
Ulsi Laboratory Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Arita Yutaka
Ulsi Laboratory Mitsubishi Electric Corporation
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Kozaru Kunihiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Yamaguchi Takehisa
Ulsi Laboratory Mitsubishi Electric Corporation
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Kinoshita Atsushi
Memory Ic Division Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Sato Hirotoshi
Ulsi Laboratory Mitsubishi Electric Corporation
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Matsuo Ryuuichi
Memory Ic Division Mitsubishi Electric Corporation
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Takahashi Jun
Ulsi Laboratory Mitsubishi Electric Corporation
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Saito M
Nihon Univ. Tokyo Jpn
著作論文
- Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
- 111-MHz 1-Mbit CMOS Synchronous Burst SRAM Using a Clock Activation Control Method (Special Issue on ULSI Memory Technology)
- A 5.8 ns 256 kb SRAM with 0.4μm Super-CMOS Process Technology (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- A 4-Mb SRAM Using a New Hierarchical Bit Line Organization Utilizing a T-Shaped Bit Line for a Small Sized Die (Special Issue on ULSI Memory Technology)