Okamoto Y | Nec Corp. Shiga Jpn

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著作論文

High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
C-band GaN-based field-effect-transistor power amplifiers with 170-W output power (Special issue: Solid state devices and materials)
Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs(Heterostructure Microelectronics with TWHM2003)
111-MHz 1-Mbit CMOS Synchronous Burst SRAM Using a Clock Activation Control Method (Special Issue on ULSI Memory Technology)

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