Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
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概要
- 論文の詳細を見る
This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band low output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power back off point from the 2 dB output compression point.
- 社団法人電子情報通信学会の論文
- 1999-05-25
著者
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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MATSUNAGA Kohji
Kansai Electronics Research Laboratorics, NEC Corporation
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OKAMOTO Yasuhiro
ULSI Device Development Laboratories, NEC Corporation
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KANAMORI Mikio
ULSI Device Development Laboratories, NEC Corporation
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KUZUHARA Masaaki
Photonic and Wireless Devices Research Labs., NEC Corp.
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Matsunaga Kohji
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Matsunaga Kohji
Kansai Electronics Research Laboratorics Nec Corporation
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Okamoto Yasuyuki
Daioh Electric Corporation
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Kuzuhara M
Photonic And Wireless Devices Research Labs. Nec Corp.
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