Kuzuhara Masaaki | Ulsi Device Development Laboratories Nec Corporation
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概要
関連著者
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Kuzuhara Masaaki
Ulsi Device Development Laboratories Nec Corporation
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KUZUHARA Masaaki
ULSI Device Development Laboratories, NEC Corporation
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Hori Yasuko
Kansai Electronics Research Laboratories Nec Corporation
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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MATSUNAGA Kohji
Kansai Electronics Research Laboratorics, NEC Corporation
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OKAMOTO Yasuhiro
Kansai Electronics Research Laboratories, NEC Corporation
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KANAMORI Mikio
Kansai Electronics Research Laboratories, NEC Corporation
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TAKAYAMA Yoichiro
Semiconductor Group, NEC Corporation
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KUZUHARA Masaaki
Photonic and Wireless Devices Research Labs., NEC Corp.
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Matsunaga Kohji
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Matsunaga Kohji
Kansai Electronics Research Laboratorics Nec Corporation
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Okamoto Yasuyuki
Daioh Electric Corporation
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Iwata N
Nihon Univ. Funabashi‐shi Jpn
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Iwata Naotaka
Kansai Electronics Research Laboratories Nec Corporation
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Tokashiki K
Nec Corp. Kanagawa Jpn
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Kuzuhara M
Photonic And Wireless Devices Research Labs. Nec Corp.
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MIZUTA Masashi
ULSI Device Development Laboratories, NEC Corporation
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NISHIMURA Takeshi
Kansai Electronics Research Laboratories, NEC Corporation
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TAKEMURA Koichi
Fundamental Research Laboratories, NEC Corporation
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Takemura K
Fundamental Research Laboratories Nec Corporation
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Takemura Koichi
Fundamental Research Laboratories Nec Corporation
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Iwata N
Fundamental Research Laboratories Nec Corporation
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Takayama Yoichiro
Semiconductor Group Nec Corporation
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Nishimura T
Nec Corp. Otsu‐shi Jpn
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Miyasaka Y
Fundamental Research Laboratories Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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Mizuta Masashi
Ulsi Device Development Laboratories Nec Corporation
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Nishimura Takeshi
Kansai Electronics Research Laboratories Nec Corporation
著作論文
- Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
- Analysis of Electric Field Distribution in Novel GaAs MESFET with a Field-Modulating Plate
- SrTiO_3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency