Takayama Yoichiro | Semiconductor Group Nec Corporation
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概要
関連著者
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Takayama Yoichiro
Semiconductor Group Nec Corporation
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TAKAYAMA Yoichiro
Semiconductor Group, NEC Corporation
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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MATSUNAGA Kohji
Kansai Electronics Research Laboratorics, NEC Corporation
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OKAMOTO Yasuhiro
Kansai Electronics Research Laboratories, NEC Corporation
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KANAMORI Mikio
Kansai Electronics Research Laboratories, NEC Corporation
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KUZUHARA Masaaki
ULSI Device Development Laboratories, NEC Corporation
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KUZUHARA Masaaki
Photonic and Wireless Devices Research Labs., NEC Corp.
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Matsunaga Kohji
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Matsunaga Kohji
Kansai Electronics Research Laboratorics Nec Corporation
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Okamoto Yasuyuki
Daioh Electric Corporation
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Yano Hitoshi
Opto-electronics Research Laboratories Nec Corporation
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Kuzuhara M
Photonic And Wireless Devices Research Labs. Nec Corp.
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Kuzuhara Masaaki
Ulsi Device Development Laboratories Nec Corporation
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Takayama Y
Semiconductor Group Nec Corporation
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MATSUNO Noriaki
Opto-Electronics Research Laboratories, NEC Corporation
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SUZUKI Yasuyuki
Opto-Electronics Research Laboratories, NEC Corporation
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INOUE Toshiaki
Compound Semiconductor Device Division, NEC Corporation
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TODA Tetsu
Compound Semiconductor Device Division, NEC Corporation
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KOSE Yasushi
Compound Semiconductor Device Division, NEC Corporation
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HONJO Kazuhiko
Opto-Electronics Research Laboratories, NEC Corporation
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Honjo Kazuhiko
Opto-electronics Research Laboratories Nec Corporation
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Toda Tetsu
Compound Semiconductor Device Division Nec Corporation
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Kose Yasushi
Compound Semiconductor Device Division Nec Corporation
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Matsuno Noriaki
Opto-electronics Research Laboratories Nec Corporation
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Inoue Toshiaki
Compound Semiconductor Device Division Nec Corporation
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Suzuki Yasuyuki
Opto-electronics Research Laboratories Nec Corporation
著作論文
- Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
- Large-Signal Analysis of Power MOSFETs and Its Application to Device Design (Special Issue on Microwave and Millimeterwave High-power Devices)
- Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers (Special Issue on Microwave and Millimeterwave High-power Devices)