Large-Signal Analysis of Power MOSFETs and Its Application to Device Design (Special Issue on Microwave and Millimeterwave High-power Devices)

概要

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This paper describes novel techniques for analyzing power MOSFETs. Since the gate width of power MOSFETs is much larger than that of power MESFETs or HJFETs, an appropriate device design to suppress matching circuit losses is needed. These losses and the intrinsic device characteristics are analyzed employing the proposed techniques, which are based on large-signal simulations. Also, new formulas describing the dependence of saturated output power on gate width are derived to perform loss-minimized design. These techniques are applied to the design of power MOSFETs for GSM cellular telephones. As a result, an output power of 35.5dBm with a power-added efficiency of 55% and a power gain of 10.5dB at 900MHz have been achieved.
社団法人電子情報通信学会の論文
1997-06-25