Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers (Special Issue on Microwave and Millimeterwave High-power Devices)
スポンサーリンク
概要
- 論文の詳細を見る
Microwave power transistors for high efficiency applications are surveyed briefly. Methodologies for microwave transistor power amplifier circuit design are discussed. Microwave transistor power amplifiers are categorized according to their operation into classes A, AB, B, C, and F, and some preliminary results on output power, power efficiency, and power gain for the amplifiers in various classes are provided by an analysis using an ideal transistor model. Circuit conditions controlling the voltage and current waveforms and device parameters such as the knee voltage in the device current-voltage characteristics are discussed for viewpoint of realizing high-efficiency power amplifier operation. A practical power amplifier design is considered with respect to the device characteristics and circuit conditions.
- 社団法人電子情報通信学会の論文
- 1997-06-25
著者
-
Takayama Y
Semiconductor Group Nec Corporation
-
Takayama Yoichiro
Semiconductor Group Nec Corporation
関連論文
- Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
- Large-Signal Analysis of Power MOSFETs and Its Application to Device Design (Special Issue on Microwave and Millimeterwave High-power Devices)
- Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers (Special Issue on Microwave and Millimeterwave High-power Devices)