Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
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概要
- 論文の詳細を見る
A buried gate AlGaAs/InGaAs heterojunction FET (HJFET) with gate breakdown voltage of 30V was examined for high drain bias (higher than 10V) operation. High breakdown voltage was realized due to the optimization of the narrow recess depth. A 1.4mm HJFET has exhibited an output power of 30.2dBm (1050mW) with 50% power added efficiency (PAE) and 12.1dB linear gain at 12GHz with a 13V drain bias. An internal matching circuit for a 16.8mm HJFET was designed using a large-signal load impedance determined from load-pull measurement. The 16.8mm internally-matched HJFET has delivered 38.9dBm (7.8W) output power with 46% PAE and 11.6dB linear gain at 12GHz with a drain bias of 13V. This is the first report of higher than 10V operation of an X-and Ku-band power HJFET with the excellent power performance.
- 社団法人電子情報通信学会の論文
- 1997-06-25
著者
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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MATSUNAGA Kohji
Kansai Electronics Research Laboratorics, NEC Corporation
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OKAMOTO Yasuhiro
Kansai Electronics Research Laboratories, NEC Corporation
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KANAMORI Mikio
Kansai Electronics Research Laboratories, NEC Corporation
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KUZUHARA Masaaki
ULSI Device Development Laboratories, NEC Corporation
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TAKAYAMA Yoichiro
Semiconductor Group, NEC Corporation
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KUZUHARA Masaaki
Photonic and Wireless Devices Research Labs., NEC Corp.
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Matsunaga Kohji
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Matsunaga Kohji
Kansai Electronics Research Laboratorics Nec Corporation
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Okamoto Yasuyuki
Daioh Electric Corporation
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Kuzuhara M
Photonic And Wireless Devices Research Labs. Nec Corp.
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Kuzuhara Masaaki
Ulsi Device Development Laboratories Nec Corporation
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Takayama Yoichiro
Semiconductor Group Nec Corporation
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