KUZUHARA Masaaki | Photonic and Wireless Devices Research Labs., NEC Corp.
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概要
関連著者
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KUZUHARA Masaaki
Photonic and Wireless Devices Research Labs., NEC Corp.
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Kuzuhara M
Photonic And Wireless Devices Research Labs. Nec Corp.
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Matsunaga Kohji
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Okamoto Yasuyuki
Daioh Electric Corporation
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Ando Yasuhiro
Ntt Telecommunications Energy Laboratories
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Ando Y
Nec Corp. Otsu‐shi Jpn
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Ando Yuji
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Ando Yuji
National Institute Of Advanced Industrial Science And Technology (aist)
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MATSUNAGA Kohji
Kansai Electronics Research Laboratorics, NEC Corporation
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ANDO Yuji
Photonic and Wireless Devices Research Labs., NEC Corp.
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NAKAYAMA Tatsuo
Photonic and Wireless Devices Research Labs., NEC Corp.
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MIYAMOTO Hironobu
Photonic and Wireless Devices Research Labs., NEC Corp.
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Ando Yoshiaki
Graduate School Of Science And Technology Chiba University
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Matsunaga Kohji
Kansai Electronics Research Laboratorics Nec Corporation
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Nakayama Tatsuo
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Ando Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Nakayama T
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Kuzuhara Masaaki
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Miyamoto H
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Ota Kazuki
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Wakejima A
Nec Corp. Otsu‐shi Jpn
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OKAMOTO Yasuhiro
ULSI Device Development Laboratories, NEC Corporation
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KANAMORI Mikio
ULSI Device Development Laboratories, NEC Corporation
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OKAMOTO Yasuhiro
Kansai Electronics Research Laboratories, NEC Corporation
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KANAMORI Mikio
Kansai Electronics Research Laboratories, NEC Corporation
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KUZUHARA Masaaki
ULSI Device Development Laboratories, NEC Corporation
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TAKAYAMA Yoichiro
Semiconductor Group, NEC Corporation
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INOUE Takashi
Photonic and Wireless Devices Research Labs., NEC Corp.
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KASAHARA Kensuke
Photonic and Wireless Devices Research Labs., NEC Corp.
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OKAMOTO Yasuhiro
Photonic and Wireless Devices Research Labs., NEC Corp.
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Iwata N
Nihon Univ. Funabashi‐shi Jpn
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Iwata Naotaka
Kansai Electronics Research Laboratories Nec Corporation
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KUZUHARA Masaaki
Kansai Electronics Laboratories, NEC Corporation
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KUZUHARA Masaki
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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NOUE Takashi
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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OKAMOTO Kensuke
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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WAKEJIMA Akio
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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OTA Kazuki
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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MATSUNAGA Kohji
Photonic and Wireless Devices Research Laboratories, NEC Corporation
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Kasahara Kensuke
Photonic And Wireless Devices Research Labs. Nec Corp.
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Kuzuhara Masaaki
Ulsi Device Development Laboratories Nec Corporation
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Noue Takashi
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Iwata N
Fundamental Research Laboratories Nec Corporation
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Takayama Yoichiro
Semiconductor Group Nec Corporation
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Okamoto Kensuke
Photonic And Wireless Devices Research Laboratories Nec Corporation
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Inosako Keiko
Kansai Electronics Research Laboratories, NEC Corporation
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Kuzuhara Masaaki
Kansai Electronics Laboratories Nec Corporation
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Inosako Keiko
Kansai Electronics Research Laboratories Nec Corporation
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Inoue Takashi
Photonic And Wireless Devices Research Labs. Nec Corp.
著作論文
- Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications (Special Issue on Microwave and Millimeterwave High-power Devices)
- Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs(Heterostructure Microelectronics with TWHM2003)
- AIGaN/GaN Heterojunction FETs for High Power Applications
- High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- Power Heterojunction FETs for Low-Voltage Digital Cellular Applications