C-band GaN-based field-effect-transistor power amplifiers with 170-W output power (Special issue: Solid state devices and materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Ando Yasuhiro
Ntt Telecommunications Energy Laboratories
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Ando Y
Nec Corp. Otsu‐shi Jpn
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Ando Yuji
National Institute Of Advanced Industrial Science And Technology (aist)
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Okamoto Y
Nec Corp. Shiga Jpn
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Okamoto Yasuhiro
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Ando Yoshiaki
Graduate School Of Science And Technology Chiba University
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Nakayama Tatsuo
Advanced Hf Device R & D Center R & D Association For Future Electron Devices:nec System Dev
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Okamoto Yasuyuki
Daioh Electric Corporation
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