NISHIMURA Takeshi | Kansai Electronics Research Laboratories, NEC Corporation
スポンサーリンク
概要
関連著者
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Iwata Naotaka
Kansai Electronics Research Laboratories Nec Corporation
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NISHIMURA Takeshi
Kansai Electronics Research Laboratories, NEC Corporation
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Nishimura Takeshi
Kansai Electronics Research Laboratories Nec Corporation
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MIYASAKA Yoichi
Fundamental Research Laboratories, NEC Corporation
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Iwata N
Nihon Univ. Funabashi‐shi Jpn
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Tokashiki K
Nec Corp. Kanagawa Jpn
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TAKEMURA Koichi
Fundamental Research Laboratories, NEC Corporation
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Takemura K
Fundamental Research Laboratories Nec Corporation
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Takemura Koichi
Fundamental Research Laboratories Nec Corporation
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Iwata N
Fundamental Research Laboratories Nec Corporation
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Nishimura T
Nec Corp. Otsu‐shi Jpn
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Miyasaka Y
Fundamental Research Laboratories Nec Corporation
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Miyasaka Yoichi
Fundamental Research Laboratories Nec Corporation
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Hau Gary
Kansai Electronics Research Laboratories Nec Corporation
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Tomita M
Nit Interdisciplinary Res. Lab. Tokyo Jpn
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Tomita Masato
Ntt Lifestyle And Enviromental Technology Laboratories Ntt Corporation
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TOMITA MASATOSHI
Kansai Environmental Engineering Center Co. (KANSO)
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Tomita M
Ntt Lifestyle And Enviromental Technology Laboratories Ntt Corporation
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Kuzuhara Masaaki
Ulsi Device Development Laboratories Nec Corporation
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BITO Yasunori
Kansai Electronics Research Laboratories, NEC Corporation
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YAMAGUCHI Keiko
Kansai Electronics Research Laboratories, NEC Corporation
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Bito Y
Nec Corp. Otsu‐shi Jpn
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Bito Yasunori
Kansai Electronics Research Laboratories Nec Corporation
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Yamaguchi Keiko
Kansai Electronics Research Laboratories Nec Corporation
著作論文
- Wide-Band CDMA Distortion Characteristics of an AlGaAs/InGaAs/AlGaAs Heterojunction FET under Various Quiescent Drain Current Operations (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Single 1.5V Operation Power Amplifier MMIC with SrTiO_3 Capacitors for 2.4GHz Wireless Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- SrTiO_3 Capacitor with Relative Dielectric Constant of 200 on GaAs Substrate at Microwave Frequency