Wada Tomohisa | ULSI Laboratory, Mitsubishi Electric Corporation

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概要

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著作論文

Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
Phases and Third-Order Optical Nonlinearities in Tetravalent Metallophthalocyanine Thin Films
Third-Order Nonlinear Optical Properties in Soluble Phthalocyanines with Tert-Butyl Substituents
Enhancement of Third-Order Optical Nonlinearities of Soluble Vanadyl Phthalocyanines in Doped Polymer Films
Third-Order Optical Nonlinearities in Porphyrins with Extended π-Electron Systems
All-Optical Switching Phenomenon in Polydiacetylene (12,8) Based Nonlinear Directional Coupler (Special Section on Organic Functional Devices)
Two-Photon Absorption Measurements in PDA (12,8) Waveguides (Special Section on Organic Functional Devices)
Refractive Index Change of Vanadyl Phthalocyanine Thin Film in Guided Wave Geometry (Special Section on Organic Functional Devices)
111-MHz 1-Mbit CMOS Synchronous Burst SRAM Using a Clock Activation Control Method (Special Issue on ULSI Memory Technology)
A 5.8 ns 256 kb SRAM with 0.4μm Super-CMOS Process Technology (Special Issue on Circuit Technologies for Memory and Analog LSIs)
A 4-Mb SRAM Using a New Hierarchical Bit Line Organization Utilizing a T-Shaped Bit Line for a Small Sized Die (Special Issue on ULSI Memory Technology)

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