TSUBOUCHI Natsuro | ULSI Laboratory, Mitsubishi Electric Corporation

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概要

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著作論文

The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influemce on Short-Channel Effects in SOI MOSFET's
Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate
Optimization of Nitridation and Reoxidation Conditions for EEPROM^* Tunneling Dielectric
A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory
New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
Application of Proximity Effect Correction Usirng Pattern-Area Density to Patterning on a Heavy-Metal Substrate and the Cell-Projection Exposure
Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor

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