Kusunoki Shigeru | ULSI Laboratory, Mitsubishi Electric Corporation

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著作論文

New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure

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