Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure

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概要

• 論文の詳細を見る

• We studied the effects of nitrogen implantation in the SiO2 sidewall spacer in detail in order to improve in the reliability of lightly doped drain (LDD) metal oxide field-effect transistors (MOSFETs), since the hot carrier degradation of LDD MOSFETs remains one of major issues even in the sub-quarter-micron region. It was found that nitrogen implantation in the SiO2 sidewall spacer can effectively suppress the hot carrier degradation of the LDD structure because the nitrogen atoms are segregated at the interface between the sidewall SiO2 and the Si substrate. This segregation can reduce the generation of interface states or electron traps in the sidewall spacer without causing gate depletion or an increase in gate resistance. Highly reliable sub-quarter-micron LDD N-MOSFETs can be realized using this nitrogen implantation technique.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Miyoshi Hirokazu

  Ulsi Laboratory Mitsubishi Electric Corporation

• OKUMURA Yoshinori

  ULSI Laboratory, Mitsubishi Electric Corporation

• Kuroi Takashi

  Ulsi Development Center Mitsubishi Electric Corporation

• Kusunoki Shigeru

  ULSI Laboratory, Mitsubishi Electric Corporation

• Inuishi Masahide

  Ulsi Development Center Mitsubishi Electric Corporation

• Shimizu Satoshi

  Ulsi Laboratory Mitsubishi Electric Corporation

• Shimizu Satoshi

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Okumura Yoshinori

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Kuroi Takashi

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Miyoshi Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

• Inuishi Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan

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