Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-12-15

著者

• Shimizu Masahiro

  Ulsi Development Center Mitsubishi Electric Corporation

• INUISHI Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation

• Arima H

  Mitsubishi Electric Corp. Hyogo Jpn

• Arima Hideaki

  Lsi Research And Development Laboratory Mitusbishi Electric Corporation

• Arima Hideaki

  Ulsi Development Center Mitsubishi Electric Corp.

• INUISHI Masahide

  Advanced Device Development Dept., Renesas Technology Corp.

• Hamaguchi C

  Osaka Univ. Osaka Jpn

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Shimizu M

  Advanced Industrial Science And Technology (aist) Power Electronics Research Center

• Shimizu Mitsuaki

  Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology

• MITSUI Katsuyoshi

  ULSI Developtment Center, Mitsubishi Electric Corporation

• Mitsui Katsuyoshi

  Ulsi Developtment Center Mitsubishi Electric Corporation

• Arima Hideaki

  Ulsi Development Center Mitsubishi Electric Corporation

• Inuishi Masahide

  Advanced Device Development Dept. Renesas Technology Corp.

• Inuishi Masahide

  Ulsi Development Center Mitsubishi Electric Corporation

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