Pb(Zr, Ti)O_3薄膜を用いたMFIS構造における絶縁体膜の検討 : C-V及びDLTS法による界面準位密度の測定
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概要
- 論文の詳細を見る
絶縁体膜としてMgO, Al_2O_3およびTiO_2薄膜を用いたMFIS(metal-ferroelectrics-insulator-semiconductor)構造を作製した。これらのバッファ層を用いることで, Si(100)基板上に多結晶ペロブスカイトPb(Zr, Ti)O_3(PZT)薄膜が成長した。MISダイオードでは電界効果が確認されたが, MFISダイオードでは強誘電性に起因するヒステリシスは確認できなかった。DLTS(Deep Level Transient Spectroscopy)法により測定したAu / PZT / Si及びAu / PZT / Al_2O_3 / Siダイオードの界面準位密度はそれぞれ2×10^<12>, 2×10^<11>-1×10^<12>cm^<-2>eV^<-1>であった。
- 社団法人電子情報通信学会の論文
- 2000-03-08
著者
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藤沢 浩訓
姫路工業大学大学院工学研究科電気系工学専攻
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清水 勝
姫路工業大学大学院工学研究科電気系工学専攻
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丹生 博彦
姫路工業大学大学院工学研究科電気系工学専攻
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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丹生 博彦
兵庫県立大学大学院工学研究科 電気系工学専攻:姫路工業大学大学院工学研究科 電気系工学専攻
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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