Terminating Structure of Plasma-Assisted Molecular Beam Epitaxial GaN{0001} Film Surface Identified by Coaxial Impact Collision Ion Scattering Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-06-15
著者
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Suzuki Y
Showa Shell Sekiyu K.k. Kanagawa
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Suzuki Y
Hitachi Ltd. Tokyo Jpn
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Suzuki Y
Optoelectronic Division Electrotechnical Laboratory
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Hayashi Shinji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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SHIMIZU Saburo
ULVAC JAPAN, Ltd
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Hayashi S
Department Of Electrical And Electronics Engineering Faculty Of Engineering Kobe University
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SUZUKI Yoshifumi
NTT Electrical Communications Laboratories
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Suzuki Yoshiichi
Central Research And Development Laboratory Showa Shell Sekiyu K.k.
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Suzuki Yoshifumi
Department Of Materials Science Faculty Of Engineering Kyushu Institute Of Technology
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Hayashi Shigenori
Central Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Hayashi Shigenori
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Hayashi Shigenori
Faculty Of Engineering Osaka University
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Suzuki Yoshishige
Joint Research Center For Atom Technology(jrcat)-national Institute For Advanced Interdisciplinary R
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Suzuki Yasuzou
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology
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Shimizu S
R&d Association Of Future Electron Devices C/o National Institute Of Advanced Industrial Science
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Shimizu Saburo
Ulvac Corporation
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HAYASHI Shigeki
Shimadzu Corporation
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SUZUKI Yasumasa
ULVAC JAPAN, Ltd.
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NISHIHARA Takaharu
Shimadzu Corporation
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SHINOHARA Makoto
Shimadzu Corporation
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Nishihara T
Av Core Technology Development Center Matsushita Electric Industrial Co. Ltd.
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Shinohara M
Shimadzu Corporation
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Nishihara Takashi
Optical Disk Systems Development Center Matsushita Electric Industrial Co. Ltd.
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