Highly Selective SiO2 Etching Using Inductively Coupled Plasma Source with a Multispiral Coil

概要

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To exploit the highly selective SiO2 etching in an inductively coupled plasma (ICP) with a multispiral coil (MSC), the effects of chamber wall heating and pulse modulation have been examined, employing a laser-induced fluorescence (LIF) technique to detect CFx (x=1, 2) radicals. It was found that chamber wall heating up to 100°C in a CHF3/C4F8 plasma leads to a drastic increase in the SiO2 selectivity to Si, accompanied by an increase in the radical densities. A further increase in the selectivity of SiO2 up to ∼45 was realized by pulse modulation whereby the CF2 radical density increases with shortening of the modulation period to 20 µs. The resultant high selectivity could be brought about by controlling the production and extinction processes of the radicals in the MSC-ICP.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
1998-04-30