Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
スポンサーリンク
概要
- 論文の詳細を見る
- 1999-09-20
著者
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Yamada T
Tokyo Inst. Of Technol. Tokyo Jpn
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Yamada T
Daido Inst. Technol. Nagoya Jpn
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Yamada T
Sophia Univ. Tokyo Jpn
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Yamada T
Ntt Basic Research Laboratories:(present Address) Ntt Opto-electronics Laboratories
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Yamada T
Tokai Univ. Hiratsuka Jpn
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YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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MORIWAKI Masaru
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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YAMADA Takayuki
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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FUJII Shinji
ULSI Process Technology Development Center, Matsushita Electronics Corporation
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Yamada Tomoyuki
Research Laboratory Oki Electric Industry Co. Ltd.
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Fujii S
It Components Division Sumitomo Electric Industries Ltd.
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Yamada T
Department Of Electrical And Electronics Engineering Sophia University
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Harada Y
Life Culture Department Seitoku University
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Fujii S
Ion Engineering Research Institute Corp.
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Yamanaka M
Electron Devices Division Electrotechnical Laboratory
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Yamanaka Michinari
Ulsi Process Technology Development Center Matsushita Electric Industrial Co. Ltd.
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Moriwaki Masaru
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Fujii Shinji
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yamada Takayuki
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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